KTB772

SEMICONDUCTOR TECHNICAL DATA AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES Complementary to KTD882. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEBO Collector Current DC Pulse (Note) IC ICP Base Current (DC) IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg Note : Pulse Width 10mS, Duty Cycle 50%. RATING -40 -30 -5 -3 -7 -0.6 1.5 10 150 -55 150 UNIT V V V A A W KTB772 EPITAXIAL PLANAR PNP TRANSISTOR A B C H J K D E F G L M O NP 12 3 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 Φ3.2+_ 0.1 3.5 11.0 +_ 0.3 2.9 MAX 1.0 MAX 1.9 MAX 0.75 +_ 0.15 15.50+_ 0.5 2.3 +_ 0.1 0.65 +_ 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter-Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Current Gain Bandwidth Product ICBO IEBO hFE(1) hFE(2) (Note) VCE(sat) VBE(sat) fT VCB=-30V, IE=0 VEB=-3V, IC=0 VCE=-2V, IC=-20mA VCE=-2V, IC=-1A IC=-2A, IB=-0.2A IC=-2V, IB=-0.2A VCE=-5V, IC=-0.1A Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz * Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed Note: hFE(2) Classification O:100 200 , Y:160 320 , GR:200 400 MIN. 30 100 - TYP. - 220 160 -0.3 -1.0 80 55 MAX. -1 -1 400 -0.5 -2....