KTB1260

J B EQ SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTD1898. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC PC* Tj Storage Temperature Range Tstg * Mounted on ceramic substrate(250mm2 0.8t) RATING -80 -80 -5 -1 1 500 1 150 -55 150 UNIT V V V A A mW W KTB1260 EPITAXIAL PLANAR PNP TRANSISTOR AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Marking hFE Rank Lot No. Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=-60V, IE=0 Emitter Cut-off Current IEBO VEB=-4V, IC=0 Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 DC Current Gain hFE(Note) VCE=-3V, IC=-100mA Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA Transition Frequency fT VCE=-5V, IC=-50mA, f=30MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Note : hFE Classification O:70 140, Y:120 240, GR:200 400 MIN. -80 70 - TYP. - 100 25 MAX. -1 -1 400 -0.4 - UNIT A A V V MHz pF 2003. 12. 12 Revision No : 2 1/3 COLLECTOR CURRENT I C (mA) KTB1260 ...