SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
FEATURES High Power Dissipation : PC=1.5W(...
SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION
VOLTAGE LARGE CURRENT
FEATURES High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTD1691.
)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base
Voltage
Collector Current
DC Pulse *
Base Current
VCBO VCEO VEBO
IC ICP IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
* PW 10ms, Duty Cycle 50%
RATING -60 -60 -7 -5 -8 -1 1.5 20 150
-55 150
UNIT V V V
A
A
W
KTB1151
EPITAXIAL PLANAR PNP TRANSISTOR
A B C
H J K
D E
F G
L
M
N
O P
12 3
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C D E F G H J K L M N O P
MILLIMETERS 8.3 MAX
5.8 0.7 Φ3.2+_ 0.1
3.5 11.0 +_ 0.3 2.9 MAX
1.0 MAX 1.9 MAX 0.75 +_ 0.15 15.50+_ 0.5 2.3 +_ 0.1 0.65 +_ 0.15
1.6 3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation
Voltage * Base-Emitter Saturation
Voltage *
ICBO IEBO hFE 1 hFE2 (Note) hFE 3 VCE(sat) VBE(sat)
TEST CONDITION VCB=-50V, IE=0 VEB=-7V, IC=0 VCE=-1V, IC=-0.1A VCE=-1V, IC=-2A VCE=-2V, IC=-5A IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A
Turn On Time
ton
Switching Time
Storage Time
tstg
Fall Time
tf
* Pulse test : PW 350 S, Duty Cycle 2% Pulse Note) hFE(2) Classification : O:160 320, Y:200
0
I B2 INPUT
IB1
20µsec
-IB1=IB2=0.2A DUTY CYCLE <= 1%
400.
IB1 IB2
5Ω
OUTPUT VCC =-10V
MIN. 60
...
