SEMICONDUCTOR
TECHNICAL DATA
DIFFERENTIAL AMP. APPLICATION.
FEATURES ᴌMatched Pairs for Differential Amplifiers. ᴌHigh Breakdown Voltage : VCEO=-120V(Min.). ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTC3400.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IE PC Tj Tstg
RATING -120 -1.
EPITAXIAL PLANAR PNP TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
DIFFERENTIAL AMP. APPLICATION.
FEATURES ᴌMatched Pairs for Differential Amplifiers. ᴌHigh Breakdown Voltage : VCEO=-120V(Min.). ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTC3400.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IE PC Tj Tstg
RATING -120 -120 -5 -100 100 625 150
-55ᴕ150
UNIT V V V mA mA mW ᴱ ᴱ
L M
C
KTA2400
EPITAXIAL PLANAR PNP TRANSISTOR
BC
JA
K
E G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=-120V, IE=0
Emitter Cut-off Current
IEBO VEB=-5V, IC=0
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0
DC Current Gain
hFE (Note) VCE=-6V, IC=-2mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-10mA, IB=-1mA
Transition Frequency
fT VCE=-6V, IC=-1mA
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Noise Figure
NF VCE=-6V, IC=-0.1mA, f=1kHz, Rg=10kή
Note : hFE Classification Gᵈ:200ᴕ400, In case of Gᵈ, ᵈ:A to G, GR: 200~400
MIN. -
-120 200
-
TYP. -
100 4.0 1.0
MAX. -100 -100
400 -0.3
10
UNIT nA nA V
V MHz pF dB
hFE Classification .