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KTA2014F Datasheet

Part Number KTA2014F
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KTA2014F DatasheetKTA2014F Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4075F. Thin Fine Pitch Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range .

  KTA2014F   KTA2014F






Part Number KTA2014V
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KTA2014F DatasheetKTA2014V Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4075V. Very Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATIN.

  KTA2014F   KTA2014F







Part Number KTA2014E
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KTA2014F DatasheetKTA2014E Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4075E. Small Package. KTA2014E EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current IB Collector Power Dissipation Junction Temperature.

  KTA2014F   KTA2014F







Part Number KTA2014
Manufacturers SeCoS
Logo SeCoS
Description PNP Transistor
Datasheet KTA2014F DatasheetKTA2014 Datasheet (PDF)

Elektronische Bauelemente KTA2014 -0.15A , -50V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low frequency power amplifier application Power switching application CLASSIFICATION OF hFE Product-Rank KTA2014-O Range 70~140 Marking Code SO KTA2014-Y 120~240 SY KTA2014-GR 200~400 SG PACKAGE INFORMATION Package MPQ SOT-323 3K Leader Size 7 inch SOT-323 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F.

  KTA2014F   KTA2014F







Part Number KTA2014
Manufacturers GME
Logo GME
Description PNP Silicon Epitaxial Planar Transistor
Datasheet KTA2014F DatasheetKTA2014 Datasheet (PDF)

PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.(PC=200mW)  Excellent hFE Linearity.  Complementary to KTC4075.  Small package. Pb Lead-free Production specification KTA2014 APPLICATIONS  General purpose application and switching application. ORDERING INFORMATION Type No. Marking KTA2014 SO/SY/SG SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO Collector-Emitter .

  KTA2014F   KTA2014F







EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4075F. Thin Fine Pitch Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING -50 -50 -5 -150 -30 50 150 -55 150 UNIT V V V mA mA mW A G K KTA2014F EPITAXIAL PLANAR PNP TRANSISTOR C JD E B 2 DIM MILLIMETERS A 0.6+_ 0.05 3 B 0.8 +_ 0.05 1 C 0.38+0.02/-0.04 D 0.2 +_ 0.05 E 1.0+_ 0.05 G 0.35+_ 0.05 J 0.1+_ 0.05 K 0.15+_ 0.05 1. EMITTER 2. BASE 3. COLLECTOR TFSM Marking Type Name S hFE Rank ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=-50V, IE=0 Emitter Cut-off Current IEBO VEB=-5V, IC=0 DC Current Gain hFE (Note) VCE=-6V, IC=-2mA Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA Transition Frequency fT VCE=-10V, IC=-1mA Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Noise Figure VCE=-6V, IC=-0.1mA NF f=1kHz, Rg=10k Note : hFE Classification O(2):70 140, Y(4):120 240, GR(6):200 400 MIN. 70 80 - TYP. - -0.1 4 MAX. -0.1 -0.1 400 -0.3 7 UNIT A A V MHz pF - 1.0 10 dB 2005. 4. 21 Revision No : 0 1/3 COLLECTOR CURRENT I C (mA) KTA201.


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