KTA2014

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4075. Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING -50 -50 -5 -150 -30 100 150 -55 150 UNIT V V V mA mA mW A J G KTA2014 EPITAXIAL PLANAR PNP TRANSISTOR C L E MB M DIM MILLIMETERS 2 DA B 2.00+_ 0.20 1.25 +_ 0.15 13 C 0.90 +_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 NK J 1.30 K 0.00-0.10 L 0.70 H M 0.42+_ 0.10 N 0.10 MIN N 1. EMITTER 2. BASE 3. COLLECTOR USM Marking hFE Rank Type Name S Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=-50V, IE=0 Emitter Cut-off Current IEBO VEB=-5V, IC=0 DC Current Gain hFE (Note) VCE=-6V, IC=-2mA Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA Transition Frequency fT VCE=-10V, IC=-1mA Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Noise Figure VCE=-6V, IC=-0.1mA NF f=1kHz, Rg=10k Note : hFE Classification O(2):70 140, Y(4):120 240, GR(6):200 400 MIN. 70 80 - TYP. - -0.1 4 MAX. -0.1 -0.1 400 -0.3 7 UNIT A A V MHz pF - 1.0 10 dB 2008. 8. 29 Revi...