KTA1940

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌRecommended for 55W Audio Frequency Amplifier Output Stage. ᴌComplementary to KTC5197. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -120 -120 -5 -10 -0.8 80 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ E KTA1940 TRIPLE DIFFUSED PNP TRANSISTOR AQ B K F I J GH C D d PP L T 1 23 1. BASE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS A 15.9 MAX B 4.8 MAX C 20.0+_ 0.3 D 2.0+_ 0.3 d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX H 9.0 I 4.5 MJ 2.0 K 1.8 MAX L 20.5+_ 0.5 M 2.8 P 5.45+_ 0.2 Q Φ3.2+_ 0.2 T 0.6+0.3/-0.1 TO-3P(N) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO Collector-Emitter Breakdown Voltage V(BR)CEO DC Current Gain hFE (Note1) hFE(2) Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Voltage VBE Transition Frequency fT Collector Output Capacitance Cob Note : hFE Classification R:55~110, O:80~160. TEST CONDITION VCB=-120V, IE=0 VEB=-5V, IC=0 IC=-50mA, IB=0 VCE=-5V, IC=-1A VCE=-5V, IC=-4A IC=-6A, IB=-0.6A VCE=-5V, IC=-4A VCE=-5V, IC=-1A VCB=-10V, IE=0, f=1MHz MIN. - -120 55 35 - TYP. 75 -0.8 -0.97 30 260 MAX. -5.0 -5.0 160 -2.0 -1.5 - UNIT ỌA ỌA V V V MHz pF 1998. 10. 21 R...