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KTA1862L Datasheet

Part Number KTA1862L
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KTA1862L DatasheetKTA1862L Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KTA1862D/L EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. FEATURES High Breakdown Voltage, Typically : BVCEO=-400V. Low Collector Saturation Voltage. : VCE(sat)=-0.5V(Max.) at (IC=0.5A) High Switching Speed, Typically : tf= 0.4 S at IC=-1A Wide Safe Operating Area (SOA) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current DC Pulse Collect.

  KTA1862L   KTA1862L






Part Number KTA1862D
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KTA1862L DatasheetKTA1862D Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KTA1862D/L EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. FEATURES High Breakdown Voltage, Typically : BVCEO=-400V. Low Collector Saturation Voltage. : VCE(sat)=-0.5V(Max.) at (IC=0.5A) High Switching Speed, Typically : tf= 0.4 S at IC=-1A Wide Safe Operating Area (SOA) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current DC Pulse Collect.

  KTA1862L   KTA1862L







EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA KTA1862D/L EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. FEATURES High Breakdown Voltage, Typically : BVCEO=-400V. Low Collector Saturation Voltage. : VCE(sat)=-0.5V(Max.) at (IC=0.5A) High Switching Speed, Typically : tf= 0.4 S at IC=-1A Wide Safe Operating Area (SOA) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current DC Pulse Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -400 -400 -7 -2.0 -4.0 1.0 10 150 -55 150 UNIT V V V A W Q A C H FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E BD M I J P L O DIM A B C D E F H I J K L M O P Q MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_ 0.2 1.10+_ 0.2 2.70+_ 0.2 2.30 +_ 0.1 1.00 MAX 2.30 +_ 0.2 0.5 +_ 0.1 2.00 +_ 0.20 0.50 +_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00 +_ 0.10 0.95 MAX DPAK Q AI CJ BD H G FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E DIM MILLIMETERS A 6.60+_ 0.2 B 6.10+_ 0.2 C 5.0 +_ 0.2 P D 1.10+_ 0.2 E 9.50 +_ 0.6 F 2.30 +_ 0.1 G 0.76 +_ 0.1 H 1.0 MAX I 2.30 +_ 0.2 J 0.5 +_ 0.1 L K 2.0 +_ 0.2 L 0.50 +_ 0.1 P 1.0 +_0.1 Q 0.90 MAX ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter S.


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