SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES.
FEATURES High Voltage : VCEO...
SEMICONDUCTOR
TECHNICAL DATA
HIGH
VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES.
FEATURES High
Voltage : VCEO=-600V. High Speed Switching Time. : tf 1.0 s (IC=-0.5A) Low Collector Emitter Saturation
Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) Wide Safe Operating Area (SOA).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base Voltag
Collector Current
DC Pulse *
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* PW 10ms, Duty Cycle 50%.
VCBO VCEO VEBO
IC ICP PC Tj Tstg
RATING -600 -600 -7 -1.0 -2.0 1.0 150
-55 150
UNIT V V V
A
W
Q
KTA1807D/L
TRIPLE DIFFUSED PNP TRANSISTOR
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_0.2 5.0 +_0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1
1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_0.20 0.50+_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00+_ 0.10
0.95 MAX
DPAK
Q
AI CJ
BD
H G
FF
123
1. BASE 2. COLLECTOR 3. EMITTER
K E
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0+_ 0.2
P
D 1.10+_ 0.2 E 9.50+_ 0.6
F 2.30+_ 0.1
G 0.76+_ 0.1
H 1.0 MAX I 2.30+_ 0.2 J 0.5+_ 0.1 L K 2.0+_ 0.2 L 0.50+_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
IPAK
2003. 3. 27
Revision No : 2
1/4
KTA1807D/L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE (1) (Note) hFE (2)
Collector-Emitter Saturation Voltag...