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KTA1807D

KEC

EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. FEATURES High Voltage : VCEO...


KEC

KTA1807D

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SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. FEATURES High Voltage : VCEO=-600V. High Speed Switching Time. : tf 1.0 s (IC=-0.5A) Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) Wide Safe Operating Area (SOA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current DC Pulse * Collector Power Dissipation Junction Temperature Storage Temperature Range * PW 10ms, Duty Cycle 50%. VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -600 -600 -7 -1.0 -2.0 1.0 150 -55 150 UNIT V V V A W Q KTA1807D/L TRIPLE DIFFUSED PNP TRANSISTOR A C H FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E BD M I J P L O DIM A B C D E F H I J K L M O P Q MILLIMETERS 6.60 +_ 0.2 6.10 +_0.2 5.0 +_0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1 1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_0.20 0.50+_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00+_ 0.10 0.95 MAX DPAK Q AI CJ BD H G FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E DIM MILLIMETERS A 6.60+_ 0.2 B 6.10+_ 0.2 C 5.0+_ 0.2 P D 1.10+_ 0.2 E 9.50+_ 0.6 F 2.30+_ 0.1 G 0.76+_ 0.1 H 1.0 MAX I 2.30+_ 0.2 J 0.5+_ 0.1 L K 2.0+_ 0.2 L 0.50+_ 0.1 P 1.0 +_0.1 Q 0.90 MAX IPAK 2003. 3. 27 Revision No : 2 1/4 KTA1807D/L ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO DC Current Gain hFE (1) (Note) hFE (2) Collector-Emitter Saturation Voltag...




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