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KTA1661 Datasheet

Part Number KTA1661
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KTA1661 DatasheetKTA1661 Datasheet (PDF)

J B ED SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES High Voltage : VCEO=-120V. High Transition Frequency : fT=120MHz(Typ.). 1W(Monunted on Ceramic Substrate). Small Flat Package. Complementary to KTC4373. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -120 Collector-Emitter Voltage VCEO -120 Emitter-Base Voltage VEBO -5 Collector Current IC -800 Base Current IB -160 Collector Power Dissipation PC 500 PC* 1 Junction Temperat.

  KTA1661   KTA1661






Part Number KTA1668
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KTA1661 DatasheetKTA1668 Datasheet (PDF)

J B EJ SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE FEATURES High Voltage : VCEO=-60V(Min.). High Current : IC(Max.)=-1A. High Transition Frequency : fT=150MHz (Typ.). Wide Area of Safe Operation. Complementary to KTC4378. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC PC .

  KTA1661   KTA1661







Part Number KTA1666
Manufacturers JCST
Logo JCST
Description PNP Transistor
Datasheet KTA1661 DatasheetKTA1666 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTA1666 TRANSISTOR (PNP) FEATURES z Complementary to KTC4379 z Small Flat Package z Low Saturation Voltage z Power Amplifier and Switching Application SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Diss.

  KTA1661   KTA1661







Part Number KTA1666
Manufacturers Kexin
Logo Kexin
Description PNP Transistors
Datasheet KTA1661 DatasheetKTA1666 Datasheet (PDF)

SMD Type PNP Transistors KTA1666 Transistors ■ Features ● Small Flat Package ● Low Saturation Voltage ● Power Amplifier and Switching Application ● Comlementary to KTC4379 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperatur.

  KTA1661   KTA1661







Part Number KTA1666
Manufacturers GME
Logo GME
Description PNP Silicon Epitaxial Planar Transistor
Datasheet KTA1661 DatasheetKTA1666 Datasheet (PDF)

Production specification PNP Silicon Epitaxial Planar Transistor FEATURES Pb z High speed switching time. Lead-free z Low saturation voltage:VCE(sat)=-0.5V(Max) z PC=1~2W(Mounted on ceramic substrate) z Small flat package. z Complementary: KTC4379. KTA1666 APPLICATIONS z Power amplifier application. z Power switching application. ORDERING INFORMATION Type No. Marking KTA1666 WO/WY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter .

  KTA1661   KTA1661







Part Number KTA1666
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon PNP transistor
Datasheet KTA1661 DatasheetKTA1666 Datasheet (PDF)

KTA1666 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.  / Features ,,, KTC4379。 Low saturation voltage, high speed switching time, small flat package, Complementary to KTC4379. / Applications 。 Power amplifier and switching applications. / Equivalent Circuit / Pinning 1 2 3 PIN1:Base PIN 2:Collector / Marking hFE Classifications Symbol hFE Range Marking O 70~140 HNO ** ** PIN 3:Emitter Y 120~240 HNY http://www.fsbr.

  KTA1661   KTA1661







EPITAXIAL PLANAR PNP TRANSISTOR

J B ED SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES High Voltage : VCEO=-120V. High Transition Frequency : fT=120MHz(Typ.). 1W(Monunted on Ceramic Substrate). Small Flat Package. Complementary to KTC4373. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -120 Collector-Emitter Voltage VCEO -120 Emitter-Base Voltage VEBO -5 Collector Current IC -800 Base Current IB -160 Collector Power Dissipation PC 500 PC* 1 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 PC* : KTA1661 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V mA mA mW W KTA1661 EPITAXIAL PLANAR PNP TRANSISTOR AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Marking hFE Rank Lot No. Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage ICBO IEBO V(BR)CEO V(BR)EBO hFE (Note) VCE(sat) Base-Emitter Voltage VBE Transition Frequency fT Collector Output Capacitance Cob Note : hFE Classification O:80 160, Y:120 240 TEST CONDITION VCB=-120V, IE=0 VEB=5V, IC=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCE=-5V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-500mA VCE=-5V, IC=-100m.


2016-06-21 : MMBT5087L    DF20L60U    KTB1369    KTB1368    KTB1367    KTB1366    KTB1260    KTB1241    KTB1151    KTA539   


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