SEMICONDUCTOR
TECHNICAL DATA
HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT APPLICATION.
FEATURES ᴌHigh Voltage : VCEO=-200V. ...
SEMICONDUCTOR
TECHNICAL DATA
HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT APPLICATION.
FEATURES ᴌHigh
Voltage : VCEO=-200V. ᴌHigh Transition Frequency : fT=150MHz(Typ.). ᴌLow Collector Output Capacitance : Cob=2.6pF(Typ.). ᴌComplementary to KTC3467.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base
Voltage
Collector Current
DC Pulse
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC Icp PC Tj
Storage Temperature Range
Tstg
RATING -200 -200 -5 -100 -200 1 150
-55ᴕ150
UNIT V V V
mA
W ᴱ ᴱ
O D
KTA1070
EPITAXIAL PLANAR PNP TRANSISTOR
BD
G JA R
P DEPTH:0.2
C
Q K
FF
HH M EM
123
HL
NN 1. EMITTER 2. COLLECTOR 3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX J 14.00+_ 0.50
H
K L
0.35 MIN 0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Emitter Breakdown
Voltage
V(BR)CEO
DC Current Gain
hFE
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation
Voltage
VBE(sat)
Transition Frequency
fT
Collector Output Capacitance
Cob
Reverse Transfer Capacitance
Cre
Note : hFE Classification 0:70ᴕ140 , Y:120ᴕ240
TEST CONDITION VCB=-150V, IE=0 VEB=-4V, IC=0 IC=-1mA, IB=0 VCE=-5V, IC=-10mA IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-30V, IC=-10mA V...
