KTA1036

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌLow Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. ᴌComplementary to KTC2016. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Junction Temperature Ta=25ᴱ Tc=25ᴱ PC Tj Storage Temperature Range Tstg RATING -60 -60 -7 -3 -0.5 2.0 30 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ H E Q KTA1036 EPITAXIAL PLANAR PNP TRANSISTOR A R S F B D T L CC MM K 123 J 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER O NG P DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 Φ3.60 +_ 0.20 3.00 6.70 MAX 13.60+_ 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 9.50+_ 0.20 8.00+_ 0.20 2.90 MAX TO-220AB ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob TEST CONDITION VCB=-60V, IE=0 VEB=-7V, IC=0 IC=-50mA, IB=0 VCE=-5V, IC=-0.5A VCE=-5V, IC=-3A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.5A VCE=-5V, IC=-0.5A VCB=-10V, IE=0, f=1MHz Turn-on Time ton Switching Time Storage Time tstg Fall Time tf Note : hFE(1) Classification Y:100ᴕ200, GR:...