KST63/64
KST63/64
Darlington Transistor
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transist...
KST63/64
KST63/64
Darlington Transistor
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCES VEBO IC PC TSTG Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Collector Power Dissipation Storage Temperature Value -30 -30 -10 -500 350 150 Units V V V mA mW °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCES ICBO IEBO hFE Parameter Collector-Emitter Breakdown
Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain : KST63 : KST64 : KST63 : K ST64 VCE (sat) VBE (on) fT Collector-Emitter Saturation
Voltage Base-Emitter On
Voltage Current Gain Bandwidth Product VCE= -5V, IC= -10mA VCE= -5V, IC= -100mA IC= -100mA, IB= -0.1mA VCE= -5V, IC= -100mA VCE= -5V, IC= -10mA f=100MHz 125 5K 10K 10K 20K -1.5 -2.0 V V MHz Test Condition IC= -100, VBE=0 VCE= -30V, IE=0 VEB= -10V, IC=0 Min. -30 Max. -100 -100 Units V nA nA
* Pulse test: PW≤300µs, Duty Cycle≤2%
Marking Code
Type Mark KST63 2U KST64 2V
Marking
2U
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST63/64
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION
VOLTAGE
1000k
-10
VCE = -5V
IC = 1000 IB
V BE(sat)
hFE, DC CURRENT GAIN
100k
-1
VCE(sat)
10k
-0.1
1k
-1
-10
-100
-1000
-0.01 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter...