KST5551

KST5551 KST5551 Amplifier Transistor Collector-Emitter Voltage: VCEO=160V Collector Power Dissipation: PC (max)=350mW 3 2 1 SOT-23 Mark: G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 180 160 6 600 350 150 -55 ~ 150 Units V V V mA mW °C °C Refer to 2N5551 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VCE=5V, IC=250µA, RS=1KΩ, f=10Hz to 15.7KMz 100 80 80 30 Min. 180 160 6 50 50 250 0.15 0.2 1 1 300 6 8 V V V V MHz pF dB Max. Units V V V nA nA VCE (sat) VBE (sat) fT Cob NF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2003 Fairchild Semiconductor Corporation Rev. B2, Februar...