KST43

KST42/43 KST42/43 High Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KST42 : KST43 VCEO Collector-Emitter Voltage : KST42 : KST43 VEBO IC PC TSTG RTH(j-a) Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient 300 200 6 500 350 150 357 V V V mA mW °C °C/W 300 200 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Emitter Breakdown Voltage : KST42 : KST43 * Collector -Emitter Breakdown Voltage : KST42 : KST43 Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC=100µA, IE=0 Min. 300 200 IC=1mA, IB=0 300 200 IE=100µA, IC=0 VCB=200V, IE=0 VCB=5V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA IC=20mA, IB=2mA IC=20mA, IB=2mA VCB=20V, IE=0 f=1MHz VCE=20V, IC=10mA f=100MHz 50 25 40 40 0.5 0.9 3 4 V V pF pF MHz 6 0.1 0.1 V V V µA µA Max. Units V V BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) Cob * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance : KST42 : KST43 fT Current Gain Bandwidth Product * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST42/43 Marking Code Type Mark KST42 1D Marking KST43 1E 1D ©2002 Fairchild Semico...