KST3904

KST3904 KST3904 General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value 60 40 6 200 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICEX hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current * DC Current Gain Test Condition IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCE=30V, VEB=3V VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCB=5V, IE=0, f=1MHz VCE=20V, IC=10mA, f=100MHz IC=100µA, VCE=5V, RS=1KΩ f=10Hz to 15.7KHz VCC=3V, VBE=0.5V IC=10mA, IB1=1mA VCC=3V, IC=10mA, IB1=IB2=1mA 300 5 70 250 0.65 40 70 100 60 30 Min. 60 40 6 50 Max. Units V V V nA 300 VCE(sat) VBE(sat) Cob fT NF tON * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Noise Figure Turn On Time Turn Off Time 0.2 0.3 0.85 0.95 4 V V V V pF MHz dB ns ns tOFF * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Marking 1A ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 KST3904 Typical Cha...