KSP8098

KSP8098/8099 KSP8098/8099 Amplifier Transistor Collector-Emitter Voltage: VCEO= KSP8098: 60V KSP8099: 80V Collector Power Dissipation: PC (max)=625mW Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSP8098 : KSP8099 VCEO Collector-Emitter Voltage : KSP8098 : KSP8099 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 60 80 6 500 625 150 -55 ~ 150 V V V mA mW °C °C 60 80 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP8098 : KSP8099 * Collector-Emitter Breakdown Voltage : KSP8098 : KSP8099 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP8098 : KSP8099 ICEO IEBO hFE Collector Cut-off Current Emitter Cut-off Current DC Current Gain VCB=60V, IE=0 VCB=80V, IE=0 VCE=60V, IB=0 VEB=6V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=5mA IC=100mA, IB=10mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=10mA f=100MHz VCB=5V, IE=0 f=1MHz 0.5 0.6 150 6 100 100 75 100 100 100 100 300 nA nA nA nA Test Condition IC=100µA, IE=0 Min. 60 80 IC=10mA, IB=0 60 80 IE=10µA, IC=0 6 V V V Max. Units V V BVCEO BVEBO ICBO VCE (sat) VBE (on) Collector-Emitter Saturation Voltage * Base-Emitter On Voltage : KSP80...