KSP6520/6521
KSP6520/6521
Amplifier Transistor
• Collector-Emitter Voltage: VCEO=25V • Collector Power Dissipation: PC ...
KSP6520/6521
KSP6520/6521
Amplifier Transistor
Collector-Emitter
Voltage: VCEO=25V Collector Power Dissipation: PC (max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 40 25 4 100 625 150 -55 ~ 150 Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCEO BVEBO ICBO hFE Parameter Collector-Emitter Breakdown
Voltage Emitter Base Breakdown
Voltage Collector Cut-off Current DC Current Gain : KSP6520 : KSP6521 : KSP6520 : KSP6521 VCE (sat) Cob NF Collector-Emitter Saturation
Voltage Output Capacitance Noise Figure IC=100µA, VCE=10V IC=2mA, VCE=10V IC=50mA, IB=5mA VCB=10V, IE=0 f=100KHz IC=10µA, VCE=5V RS=10KΩ f=10Hz to 10KHz 100 150 200 300 Test Condition IC=0.5mA, IB=0 IC=10, IC=0 VCB=30V, IE=0 VCE=20V, IE=0 Min. 25 4 50 50 Typl Max. Units V V nA nA
400 600 0.5 3.5 3 V pF dB
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
KSP6520/6521
Package Dimensions
TO-92
4.58 –0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 –0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 –0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1,...