KSP43

KSP42/43 KSP42/43 High Voltage Transistor Collector-Emitter Voltage: VCEO=KSP42: 300V KSP43: 200V Collector Power Dissipation: PC(max)=625mW 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KSP42 : KSP43 VCEO Collector-Emitter Voltage : KSP42 : KSP43 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 300 200 6 500 625 150 -55 ~ 150 V V V mA mW °C °C 300 200 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP42 : KSP43 * Collector -Emitter Breakdown Voltage : KSP42 : KSP43 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP42 : KSP43 IEBO Emitter Cut-off Current : KSP42 : KSP43 hFE * DC Current Gain VBE=6V, IC=0 VBE=4V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA IC=20mA, IB=2mA IC=20mA, IB=2mA VCB=20V, IE=0 f=1MHz VCE=20V, IC=10mA f=100MHz 50 25 40 40 0.5 0.9 3 4 V V pF pF MHz 100 100 nA nA VCB=200V, IE=0 VCB=160V, IE=0 100 100 nA nA Test Condition IC=100µA, IE=0 Min. 300 200 IC=1mA, IB=0 300 200 IE=100µA, IC=0 6 V V V Max. Units V V BVCEO BVEBO ICBO VCE (sat) VBE (sat) Cob * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance : KSP42 : KSP43 fT Current Gain Bandwidth Product * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002...