KSP2907A

KSP2907A KSP2907A General Purpose Transistor Collector-Emitter Voltage: VCEO= 60V Collector Power Dissipation: PC (max)=625mW Refer to KSP2907 for graphs TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -60 -60 -5 -600 625 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE Parameter Collector-Base Breakdown Voltage * Collector Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Test Condition IC= -10µA, IE=0 IC= -10mA, IB=0 IE= -10µA, IC=0 VCB= -50V, IE=0 IC= -0.1mA, VCE= -10V VCE= -10V, IC= -1mA, VCE= -10V , IC= -10mA VCE= -10V, *IC= -150mA VCE= -10V, *IC= -500mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA VCB= -10V, IE=0 f=1MHz IC= -50mA, VCE= -20V f=100MHz VCC= -30V, IC= -150mA IB1= -15mA VCC= -6V, IC= -150mA IB1=IB2= -15mA 200 45 100 75 100 100 100 50 Min. -60 -60 -5 -10 Typ. Max. Units V V V nA 300 -0.4 -1.6 -1.3 -2.6 8 V V V V pF MHz ns ns VCE (sat) VBE (sat) Cob fT tON tOFF * Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Output Capacitance * Current Gain Bandwidth Product Turn On Ti...