KSP27

KSP25/26/27 KSP25/26/27 Darlington Transistor Collector-Emitter Voltage: VCES=KSP25: 40V KSP26: 50V KSP27: 60V Collector Power Dissipation: PC (max) =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : KSP25 : KSP26 : KSP27 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 40 50 60 10 500 625 150 -55~150 V V V V mA mW °C °C Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCES Parameter Collector-Emitter Breakdown Voltage : KSP25 : KSP26 : KSP27 Collector-Base Breakdown Voltage : KSP25 : KSP26 : KSP27 Collector Cut-off Current : KSP25 : KSP26 : KSP27 IEBO hFE VCE (sat) VBE (on) Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage VCE=30V, IE=0 VCE=40V, IE=0 VCE=50V, IE=0 VEB=10V, IB=0 VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA 10K 10K 1.5 2 V V 100 100 100 100 nA nA nA nA Test Condition IC=100µA, IE=0 Min. 40 50 60 IC=100µA, IE=0 40 50 60 V V V Max. Units V V V BVCBO ICBO * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP25/26/27 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000k 10 VCE = 5V IC = 1000 IB hFE, DC CURRENT GAIN 100k V BE(sat) 1 V CE(sat) ...