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KSH42C Datasheet

Part Number KSH42C
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet KSH42C DatasheetKSH42C Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·Electrically similar to popular TIP42C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier ·Low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V .

  KSH42C   KSH42C






Part Number KSH42C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Transistor
Datasheet KSH42C DatasheetKSH42C Datasheet (PDF)

KSH42C KSH42C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collec.

  KSH42C   KSH42C







PNP Transistor

isc Silicon PNP Power Transistor DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·Electrically similar to popular TIP42C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier ·Low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ -6 A 1.75 W 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSH42C isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)* VBE(on)* ICBO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=- 6A; IB=- 600mA IC=- 6A; VCE=-4V VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB=- 5V; IC= 0 hFE1* hFE2* DC Current Gain DC Current Gain IC=- 0.3A; VCE= -4V IC= -3A; VCE= -4V fT Current-Gain—Bandwidth Product *:Pulse test PW≤300us,duty cycle≤2% IC= -0.5A; VCE= -10V KSH42C MIN TYP MAX UNIT -100 V -1.5 V -2.0 V -10 uA -0.5 mA 30 15 75 3 .


2020-09-27 : MJE5170    2SB547    2SB434    2SB1098    2SB508    2SB515    2SB506    2SA2223    2SA2063    2SA1932   


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