KSH31/31C
KSH31/31C
General Purpose Amplifier Low Speed Switching Applications
• Lead Formed for Surface Mount Applicat...
KSH31/31C
KSH31/31C
General Purpose Amplifier Low Speed Switching Applications
Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C
1
D-PAK 1.Base
1
I-PAK 3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base
Voltage : KSH31 : KSH31C VCEO Collector-Emitter
Voltage : KSH31 : KSH31C Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ TSTG Junction Temperature Storage Temperature 40 100 40 100 5 3 5 1 15 1.56 150 - 65 ~ 150 V V V V V A A A W W °C °C Value Units
VEBO IC ICP IB PC
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining
Voltage : KSH31 : KSH31C Collector Cut-off Current : KSH31 : KSH31C ICES Collector Cut-off Current : KSH31 : KSH31C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation
Voltage * Base-Emitter On
Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A IC = 3A, IB = 375mA VCE = 4A, IC = 3A VCE = 10V, IC = 500mA 3 25 10 20 20 1 50 1.2 1.8 V V MHz µA µA mA VCE = 40V, IB = 0 VCE = 60V, IB = 0 50 50 µA µA Test Condition IC = 30mA, IB = 0 Min. 40 100 Max. Units V V
ICEO
* Pulse Test: PW≤...