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KSH29 Datasheet

Part Number KSH29
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Transistor
Datasheet KSH29 DatasheetKSH29 Datasheet (PDF)

KSH29/29C KSH29/29C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP29 and TIP29C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSH29 : KSH29C VCEO Collector-Emitter Voltage : KSH29 : KSH29C Emitter-Base Voltage Colle.

  KSH29   KSH29






Part Number KSH29C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Transistor
Datasheet KSH29 DatasheetKSH29C Datasheet (PDF)

KSH29/29C KSH29/29C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP29 and TIP29C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSH29 : KSH29C VCEO Collector-Emitter Voltage : KSH29 : KSH29C Emitter-Base Voltage Colle.

  KSH29   KSH29







Part Number KSH2955
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet KSH29 DatasheetKSH2955 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·DPAK for surface mount applications ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier low speed switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter V.

  KSH29   KSH29







Part Number KSH2955
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Transistor
Datasheet KSH29 DatasheetKSH2955 Datasheet (PDF)

KSH2955 KSH2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ -I “ Suffix) Electrically Similar to Popular KSE2955T DC Current Gain Specified to 10A High Current Gain - Bandwidth Product: fT = 2MHz (MIN), IC = -500mA 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symb.

  KSH29   KSH29







Part Number KSH210
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet KSH29 DatasheetKSH210 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·DPAK for surface mount applications ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -2.

  KSH29   KSH29







NPN Transistor

KSH29/29C KSH29/29C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP29 and TIP29C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSH29 : KSH29C VCEO Collector-Emitter Voltage : KSH29 : KSH29C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ TSTG Junction Temperature Storage Temperature 40 100 40 100 5 1 3 0.4 15 1.56 150 - 65 ~ 150 V V V V V A A A W W °C °C Value Units VEBO IC ICP IB PC Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSH29 : KSH29C Collector Cut-off Current : KSH29 : KSH29C ICES Collector Cut-off Current : KSH29 : KSH29C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 125mA VCE = 4A, IC = 1A VCE = 10V, IC = 200mA 3 40 15 20 20 1 75 0.7 1.3 V V MHz µA µA mA VCE = 40V, IB = 0 VCE = 60V, IB = 0 50 50 µA µA Test Condition IC = 30mA, IB = 0 Min. 40 100 Max. Units V V ICEO ©2002 Fairchild Semic.


2005-04-05 : D8237A    D8237A    K9K1G08U0B    KS88C0916    KS88C2064    KS88C2148    KS88C2416    KS88C2432    KS88C4404    KS88C4504   


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