isc Silicon NPN Power Transistor
DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Electrically simila...
isc Silicon NPN Power Transistor
DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Electrically similar to popular TIP112 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
100
V
VCEO
Collector-Emitter
Voltage
100
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation Ta=25℃
PC
Collector Power Dissipation TC=25℃
TJ
Junction Temperature
4
A
1.75
W
20
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
KSH112
isc website：www.iscsemi.com
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1* Collector-Emitter Saturation
Voltage IC= 2A; IB= 8mA
VCE(sat)-2* Collector-Emitter Saturation
Voltage IC= 4A; IB= 40mA
VBE(sat)* Base-Emitter Saturation
Voltage
IC= 4A; IB= 40mA
VBE(on)* Base-Emitter On
Voltage
IC= 2A; VCE= 3V
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 30mA; IB= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1*
DC Current Gain
IC= 0.5A; VCE= 3V
hFE-2*
DC Current Gain
IC= 2A; VCE= 3V
hFE-3*
DC Current Gain
IC= 4A; VCE=...
