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KSE5741

Fairchild Semiconductor

NPN Silicon Darlington Transistor

KSE5740/5741/5742 KSE5740/5741/5742 High Voltage Power Switching In Inductive Circuits • • • • • • High Voltage Power D...


Fairchild Semiconductor

KSE5741

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KSE5740/5741/5742 KSE5740/5741/5742 High Voltage Power Switching In Inductive Circuits High Voltage Power Darlington TR Small Engine lgnition Switching Regulators Inverters Solenold and Relay Drivers Motor Control 1 TO-220 2.Collector 3.Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol BVCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSE5740 : KSE5741 : KSE5742 Collector-Emitter Voltage : KSE5740 : KSE5741 : KSE5742 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature 1.Base Value 300 350 400 600 700 800 8 8 16 2.5 5 80 150 - 65 ~ 150 Units V V V V V V V A A A A W °C °C VCEV VEBO IC ICP IB IBP PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSE5740 : KSE5741 : KSE5742 Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Diode Forward Voltage Delay Time Rise Time Storage Time Fall Time Voltage Storage Time Cross-over Time Test Condition IC = 50mA, IB=0 Min. 300 350 400 1 75 50 200 100 400 2 3 2.5 3.5 2.5 0.04 0.5 8 2 4 2 V V V V V µs µs µs µs µs µs Rev. A1, June 2001 Typ. Max. Units V V V mA mA ICEV IEBO hFE VCE(sat) VBE(sat) VF tD tR tS tF tSV tC VCEV=Rate Value, VBE(OFF)=1.5V VEB = 8V, IC= 0 VCE =5V...




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