KSE45H8

KSE45H Series KSE45H Series General Purpose Power Switching Applications Low Collector-Emitter Saturation Voltage: VCE(sat) = -1V (MAX)@-8A Fast Switching Speeds Complement to KSE44H TO-220 2.Collector 3.Emitter 1 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter : KSE45H 1,2 : KSE45H 4,5 : KSE45H 7,8 : KSE45H 10,11 Value - 30 - 45 - 60 - 80 -5 - 10 - 20 50 1.67 150 - 55 ~ 150 Units V V V V V A A W W °C °C VEBO IC ICP PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES IEBO hFE Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain : KSE45H 1, 4, 7 10 : KSE45H 2, 5, 8,11 *Collector-Emitter Saturation Voltage : KSE45H 1, 4, 7 10 : KSE45H 2, 5, 8,11 *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE = Rated, VCEO, VEB = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 2A 35 60 -1 -1 -1.5 40 230 135 500 100 V V V MHz pF ns ns ns Min. Typ. Max. -10 -100 Units µA µA VCE(sat) IC = - 8A, IB = - 0.8A IC = - 8A, IB = - 0.4A IC = - 8A, IB = - 0.8A VCE = - 10V, IC = - 0.5A VCB = - 10V, f = 1MHz VCC =20V, IC = - 5A IB1 = - IB2 = - 0.5A VBE(sat) fT Cob tON tSTG tF * Pulse test:...