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KSE13001

Fairchild Semiconductor

NPN Epitaxial Silicon Transistor

KSE13001 KSE13001 Color TV Chroma Output • Collector-Base Voltage : VCBO=400V • Current Gain Bandwidth Product : fT=50M...


Fairchild Semiconductor

KSE13001

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KSE13001 KSE13001 Color TV Chroma Output Collector-Base Voltage : VCBO=400V Current Gain Bandwidth Product : fT=50MHz (TYP.) 1 TO-92 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 400 400 7 100 600 150 -55 ~ +150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=100µA, IE=0 IC=5mA, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VCE=10V, IC=20mA IC=10mA, IB=1mA VCE=30V, IC=10mA VCB=10V, IE=0, f=1MHz 50 4 40 Min. 400 400 7 0.1 80 0.5 V MHz pF Typ. Max. Units V V V µA hFE Classification Classification hFE R 40 ~ 65 O 55 ~ 80 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE13001 Typical Characteristics 20 18 1000 VCE = 10V IC[mA], COLLECTOR CURRENT 16 14 IB = 120uA hFE, DC CURRENT GAIN IB = 100uA 12 100 IB = 80uA 10 8 6 4 IB = 60uA IB = 40uA IB = 20uA 10 2 0 0 20 40 60 80 100 1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLE...




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