KSD5707

KSD5707 KSD5707 High Voltage Color Display Horizontal Deflection Output High Collector - Base Voltage : VCBO = 1500V High Speed Switching tF = 0.4µs (Max.) 1 TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 800 6 6 16 60 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT tF Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Fall Time Test Condition VCB= 800V, IE= 0 VEB= 5V, IC= 0 VCE= 5V, IC= 1A VCE= 5V, IC= 3A IC= 4A, IB= 0.8A IC= 4A, IB= 0.8A VCE= 10V, IC= 1A VCC=200V, IC=4A, IB1= 0.8A, IB2= -1.6A RL=50Ω 3 0.4 10 5 2 Min. Typ. Max. 10 1 30 15 5 1.5 V V MHz µs Units µA mA Thermal Characteristics Symbol Rθjc Thermal Resistance Characteristics Junction to Case Rating 2.08 Unit °C/W ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 KSD5707 Typical Characteristics 10 100 VCE = 5V IC[A], COLLECTOR CURRENT 8 IB = 2.0A 6 1.8A 1.6A 1.4A 1.2A 1.0A 800mA hFE, DC CURRENT GAIN 10 4 600mA 400mA ...