INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD569
DESCRIPTION ·High Collector C...
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD569
DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation
Voltage
: VCE(sat)= 0.5V(Max)@IC= 5A ·Complement to Type KSB708
APPLICATIONS ·Designed for low-frequency power
amplifiers and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
100 V
VCEO Collector-Emitter
Voltage
80 V
VEBO
Emitter-Base
Voltage
IC Collector Current-Continuous
7V 7A
ICM Collector Current-Peak
15 A
IB Base Current-Continuous
Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃
TJ Junction Temperature
3.5 A
40 W
1.5
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD569
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 5A; IB= 0.5A
ICBO Collector Cutoff Current
VCB= 80V; IE= 0
IEBO Emitter Cutoff Current
hFE-1
DC Current Gain
VEB= 5V; IC= 0 IC= 3A; VCE= 1V
hFE-2
DC Current Gain
IC= 5A; VCE= 1V
MIN TYP. MAX UNIT 80 V
0.5 V 1.5 V 10 μA 10 μA 40 200 20
hFE-1 Classifications ROY
40-80 60-120 100-200
isc website:www.iscsemi.cn
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