INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD526
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25℃ ·Complement to Type KSB596
APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 20~25W high fidelit...
