KSD5041
KSD5041
AF Output Amplifier for Electronic Flash Unit
• Low Collector-Emitter Saturation Voltage • High Perform...
KSD5041
KSD5041
AF Output Amplifier for Electronic Flash Unit
Low Collector-Emitter Saturation
Voltage High Performance at Low Supply
Voltage
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 20 7 5 0.75 150 -55 ~ 150 Units V V V A W °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) fT Cob Parameter Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation
Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=1mA, IB=0 IC=10µA, IC=0 VCB=10V, IE=0 VEB=7V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz 150 50 180 150 Min. 20 7 0.1 0.1 600 1 V MHz pF Typ. Max. Units V V µA µA
hFE Classification
Classification hFE P 180 ~ 270 Q 230 ~ 380 R 340 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002
KSD5041
Typical Characteristics
2.4
800
700
IC[A], COLLECTOR CURRENT
2.0
IB = 7mA
VCE= 2V Ta = 25℃
1.6
IB = 5mA
1.2
hFE, DC CURRENT GAIN
IB = 6mA
600
500
IB = 4mA IB = 3mA
400
300
0.8
IB = 2mA
0.4
200
IB = 1mA
100
0.0 0....