KSD401

KSD401 KSD401 TV Vertical Deflection Output Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W(TC=25°C) Complement to KSB546 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 200 150 5 2 25 150 - 55 ~ 150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC = 500uA, IE = 0 IC = 10mA, IB = 0 IE = -500uA, IC = 0 VCB = 150V, IE = 0 VCE = 10V, IC = 0.4A IC = 500mA, IB = 50mA VCE = 10V, IC = 0.4A 5 40 Min. 200 150 5 50 400 1 V MHz Typ. Max. Units V V V µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD401 Typical Characteristics 1.0 0.9 1000 VCE = 10V IB = 8mA IC[A], COLLECTOR CURRENT 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 5 10 15 20 IB = 6mA IB = 5mA IB = 4mA IB = 3mA IB = 2mA IB = 1mA 25 30 35 40 45 50 hFE, DC CURRENT GAIN...