KSD288

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD288 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 80V(Min) ·Collector Current- IC= 3A ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ APPLICATIONS ·Power regulator ·Low frequency high power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD362 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICBO Collector Cutoff Current VCB= 50V; IE= 0 hFE DC Current Gain IC= 0.5A; VCE= 5V MIN TYP. MAX UNIT 55 V 80 V 5 1.0 V 50 μA 40 240 ‹ hFE Classifications RO Y 40-80 70-140 120-240 isc website：www.iscsemi.cn 2 ...