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KSD2012

INCHANGE
Part Number KSD2012
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 9, 2020
Detailed Description isc Silicon NPN Power Transistor KSD2012 DESCRIPTION ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation...
Datasheet PDF File KSD2012 PDF File

KSD2012
KSD2012

Overview
isc Silicon NPN Power Transistor KSD2012 DESCRIPTION ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.
5A ·Low Saturation Voltage- : VCE(sat)= 1.
0V (Max) ·High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ T...


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