KSD1944

KSD1944 KSD1944 High Gain Power Transistor 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (TC=25°C) Junction Temperature Storage Temperature Value 80 60 8 3 30 150 - 55 ~ 150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO h FE VBE(sat) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Test Condition IC = 25mA, IB = 0 VCB = 80V, IE = 0 VEB = 8V, IC = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A IC = 2A, IB = 0.05A 400 Min. 60 Max. 100 10 2000 1.5 1 V V Units V µA µA ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1944 Typical Characteristics 2.0 1.8 10000 VCE = 4V IB = 1.2mA IB = 1mA IB = 0.8mA IB = 0.6mA IB = 0.4mA Ic[A], COLLECTOR CURRENT 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 hFE, DC CURRENT GAIN 1000 100 IB = 0.2mA 0 1 2 3 4 5 6 7 8 9 10 10 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 Ic = 40 IB IC[A], COLLECTOR CURRENT ICMAX(DC) DC 1 V BE(sat) 1 0.1 V CE(sat) ...