KSD1588
KSD1588
Low Frequency Power Amplifier
• Low Speed Switching • Complement to KSB1097
1
TO-220F
1.Base 2.Colle...
KSD1588
KSD1588
Low Frequency Power Amplifier
Low Speed Switching Complement to KSB1097
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base
Voltage
VCEO
Collector-Emitter
Voltage
VEBO
Emitter-Base
Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current
PC
Collector Dissipation (Ta=25°C)
PC
Collector Dissipation (TC=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* PW≤300µs, Duty Cycle≤10%
Value 100 60
7 7 15 3.5 2 30 150 -55 ~ 150
Units V V V A A A W W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
h FE1 hFE2
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation
Voltage
VBE(sat)
*Base-Emitter Saturation
Voltage
* Pulse Test: PW≤350µs, Duty Cycle≤2%
VCB = 80V, IE = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 3A VCE = 1V, IC = 5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A
Min.
40 20
Max. 10 10 200
Units µA µA
0.5
V
1.5
V
hFE1 Classification
Classification hFE1
R 40 ~ 80
O 80 ~ 120
Y 100 ~ 200
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
IC[A], COLLECTOR CURRENT
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0
IB = 18mA IB = 16mA IB = 14mA IB = 12mA IB = 10mA IB = 8mA
IB = 6mA
IB = 4mA
IB = 2mA IB = 0
5
10 15 20 25 30 35 40 45 50
VCE...