KSD1588

KSD1588 KSD1588 Low Frequency Power Amplifier Low Speed Switching Complement to KSB1097 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP *Collector Current (Pulse) IB Base Current PC Collector Dissipation (Ta=25°C) PC Collector Dissipation (TC=25°C) TJ Junction Temperature TSTG Storage Temperature * PW≤300µs, Duty Cycle≤10% Value 100 60 7 7 15 3.5 2 30 150 -55 ~ 150 Units V V V A A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition ICBO Collector Cut-off Current IEBO Emitter Cut-off Current h FE1 hFE2 *DC Current Gain VCE(sat) *Collector-Emitter Saturation Voltage VBE(sat) *Base-Emitter Saturation Voltage * Pulse Test: PW≤350µs, Duty Cycle≤2% VCB = 80V, IE = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 3A VCE = 1V, IC = 5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A Min. 40 20 Max. 10 10 200 Units µA µA 0.5 V 1.5 V hFE1 Classification Classification hFE1 R 40 ~ 80 O 80 ~ 120 Y 100 ~ 200 ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics IC[A], COLLECTOR CURRENT 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 IB = 18mA IB = 16mA IB = 14mA IB = 12mA IB = 10mA IB = 8mA IB = 6mA IB = 4mA IB = 2mA IB = 0 5 10 15 20 25 30 35 40 45 50 VCE...