KSD1417

KSD1417 KSD1417 High Power Switching Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Complement to KSB1022 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 60 60 5 7 10 0.7 2 30 150 -55 ~ 150 Units V V V A A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO h FE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition IC = 50mA, IB = 0 VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 3A VCE = 3V, IC = 7A IC = 3A, IB = 6mA IC = 7A, IB = 14mA IC = 3A, IB = 6mA VCC = 45V, IC = 4.5A IB1 = -IB2 = 6mA RL = 10Ω 2K 1K 0.9 1.2 1.5 0.8 3 2.5 Min. 60 Typ. Max. 100 3 15K 1.5 2 2.5 V V V µs µs µs Units V µA mA ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1417 Typical Characteristics 10 10k VCE = 3V IC[A], COLLECTOR CURRENT 8 IB = 1.4mA 6 IB = 1.2mA IB = 1mA IB = 0.8mA hFE, DC CURRENT GAIN 1k ...