KSD1020

KSD1020 KSD1020 Audio Frequency Amplifier Complement to KSB810 1 TO-92S 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 25 5.0 700 1.0 350 150 -55 ~ 150 Units V V V mA A mW °C °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE(sat) VBE(sat) Cob fT Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Test Condition VCB=30V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=700mA VCE=6V, IC=10mA IC=700mA, IB=70mA IC=700mA, IB=70mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=10mA 50 120 35 600 200 140 640 0.2 0.95 13 170 Min. Typ. Max. 100 100 400 700 0.4 1.2 25 mV V V pF MHz Units nA nA * Pulse Test: PW≤350µs, Duty Cycle≤ 2% hFE1 Classification Classification hFE1 Y 120 ~ 240 G 200 ~ 400 ©2004 Fairchild Semiconductor Corporation Rev. B2, April 2004 KSD1020 Typical Characteristics 20 18 1000 IB = 140µA IB = 120µA IB = 100µA IB = 80µA VCE= 1V IC[mA], COLLECTOR CURRENT 16 14 12 10 8 6 4 2 0 0 10 20 hFE, DC CURRENT GAIN...