KSC5603D

KSC5603D — NPN Silicon Transistor, Planar Silicon Transistor February 2010 KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Equivalent Circuit C B 1 TO-220 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP *Collector Current (Pulse) IB Base Current (DC) IBP *Base Current (Pulse) PC Power Dissipation(TC=25°C) TJ Junction Temperature TSTG Storage Temperature * Pulse Test: Pulse Width=5ms, Duty Cycle<10% Value 1600 800 12 3 6 2 4 100 150 -65 to +150 Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter RθJC RθJA TL Thermal Resistance Junction to Case Junction to Ambient Maximun Lead Temperature for Soldering Purpose : 1/8” from Case for 5 seconds Rating 1.25 80 270 Units V V V A A A A W °C °C Units °C/W °C/W °C © 2010 Fairchild Semiconductor Corporation KSC5603D Rev. C2 1 www.fairchildsemi.com KSC5603D — NPN Silicon Transistor, Planar Silicon Transistor Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO Collector-Base Breakdown Voltage IC=0.5mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, I...