KSC5345
KSC5345
High Voltage and High Reliability
• High speed Switching • Wide Safe Operating Area
1
TO-220 2.Collec...
KSC5345
KSC5345
High
Voltage and High Reliability
High speed Switching Wide Safe Operating Area
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 900 450 14 5 10 2 4 40 150 - 55 ~ 150 Units V V V A A A A W °C °C
* Pulse Test: Pulse Width = 5ms, Duty Cycle≤10%
Thermal Characteristics TC=25°C unless otherwise noted
Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 1.25 62.5 Unit °C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, October 2001
KSC5345
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tSTG tF tSTG tF Parameter Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Output Capacitance Current Gain bandwidth Product Storage Time Fall Time Storage Time Fall Time Test Condition IC = 500µA, IE = 0 IC = 5mA, IB = 0 IC =500µA, IE = 0 VCB = 800V, IE = 0 VEB = 14V, IC = 0 VCE = 5V, I...