KSC5338

KSC5338 KSC5338 High Voltage Power Switch Switching Application High Speed Switching Wide SOA TO-220 2.Collector 3.Emitter 1 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1000 450 9 5 10 2 4 100 150 - 65 ~ 150 Units V V V A A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob Cib fT tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Input Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB =0 IC=1mA, IE=0 VCB = 800V, VBE = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 0.5A VCE = 1V, IC = 2A IC = 1A, IB = 0.1A IC = 2A, IB = 0.4A IC = 1A, IB = 0.1A IC = 2A, IB = 0.4A VCB = 10V, f =1MHz VEB=8V, IC=0, f =1MHz VEB = 6V, IC = 0.1A VCC = 125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A RL=125Ω 70 1000 14 200 2 500 15 6 0.55 Min. 1000 450 9 10 10 30 0.8 0.5 1.1 1.25 V V V V pF pF MHz ns µs n...