KSC5321

KSC5321 KSC5321 High Voltage and High Reliability High speed Switching Wide Safe Operating Area 1 TO-220 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 800 500 7 5 10 2 4 100 150 - 55 ~ 150 Units V V V A A A A W °C °C * Pulse Test: Pulse Width = 5ms, Duty Cycle≤10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 1.25 62.5 Unit °C/W ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5321 Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Cib tON tSTG tF tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain bandwidth Product Output Capacitance Input Capacitance Turn ON Time Storage Time Fall Time Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IC =1mA, ...