KSC5047

KSC5047 KSC5047 Feature High Current Gain Low Collector Emitter Saturation Voltage 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 100 50 15 15 4 100 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO hFE VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Storage Time Fall Time Test Condition IC = 50mA, IB = 0 VCB = 100V, IE = 0 VEB = 15V, IC= 0 VCE = 5V, IC = 5A IC = 5A, IB = 0.12A IC = 5A, IB = 0.12A VCC = 20V, IC = 5A IB1 = - I B2 = 0.12A R L = 4Ω 0.5 2.5 0.5 40 0.5 1.2 V V µs µs µs Min. 50 Typ. Max. 100 100 Units V µA µA ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC5047 Typical Characteristics VBE(sat), VCE(sat), SATURATION VOLTAGE 1000 10 VCE = 5V IC=50 IB hFE, DC CURRENT GAIN 100 1 VBE(sat) VCE(sat) 0.1 10 1 0.1 1 10 100 0.01 0.1 1 10 100 IC[A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-...