KSC3296
KSC3296
Power Amplifier Applications
• Complement to KSA1304
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Epi...
KSC3296
KSC3296
Power Amplifier Applications
Complement to KSA1304
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current(DC) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 150 150 5 1.5 0.5 20 150 - 55 ~ 150 Units V V V A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICBO IEBO hFE VCE(sat) VBE(on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation
Voltage Base-Emitter ON
Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = 120V, IE = 0 VEB = 5V, IC = 0 VCE = 10V, IC = 500mA IC = 500mA, IB = 50mA VCE = 10V, IC = 500mA VCE = 10V, IC = 500mA VCB = 10V, f = 1MHz 0.65 0.75 4 35 40 75 Min. Typ. Max. 10 10 140 1.5 0.85 V V MHz pF Units µA µA
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3296
Typical Characteristics
1000
10
VCE(sat)[V], SATURATION
VOLTAGE
VCE = 10V
IC = 10 IB
hFE, DC CURRENT GAIN
100
1
10
0.1
1 0.01
0.1
1
10
0.01 0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation
Voltage
10
25
IC MAX. (Pulse)
m 10
IC[A], COLLECTOR CURRENT
IC MAX. (DC)
D
1
1s
PC[W], POWER DISSIPAT...