KSC3233

KSC3233 KSC3233 High Speed Switching Low Collector-Emitter Saturation Voltage High speed Switching : tF=1µs (Max.) @ IC=0.8A Collector-Emitter Voltage : VCEO=400V Lead formed for Surface Mount Applications (D-PAK, “ -D “ Suffix) 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 500 400 7 2 0.5 20 1 150 - 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 10mA, IB = 0 VCB = 400V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 1A IC = 1A, IB = 0.2A IC = 1A, IB = 0.2A VCC = 200V, IC= 0.8A 1B1 = -I B2 = 0.08A RL = 250Ω 20 8 1 1.5 1 2.5 1 V V µs µs µs Min. 500 400 100 1 Max. Units V V µA mA ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC3233 Typical Characteristics 2.0 100 IC[A], COLLECTOR CU...