KSC3076

KSC3076 KSC3076 Power Amplifier Applications Low Collector-Emitter Saturation Voltage Complement to KSA 1241 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 50 50 5 2 1 1 10 150 - 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition IC = 10mA, IB = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC= 0.5A VCE = 2V, IC = 1.5A IC = 1A, IB = 0.05A IC = 1A, IB = 0.05A VCE = 2V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 30V, IC = 1A 1B1 = - I B2 = 0.05A RL = 30Ω 100 30 0.1 1 0.1 70 40 Min. 50 Typ. Max. 1 1 240 0.5 1.2 V V MHz pF µs µs µs Units V µA µA hFE1 Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC3076 Package Demensions I-PAK 6.60 ±0.20 5.34 ±0.20 (0.50) (4.34) (0....