KSC2710

KSC2710 KSC2710 Low Frequency Power Amplifier Complement to KSA1150 Collector Dissipation : PC=300mW 1 TO-92S 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 20 5 500 300 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=0.1A IC=0.5A, IB=50mA 120 0.18 Min. 40 20 5 0.1 0.1 400 0.4 V Typ. Max. Units V V V µA µA hFE Classification Classification hFE Y 120 ~ 240 G 200 ~ 400 ©2004 Fairchild Semiconductor Corporation Rev. B2, April 2004 KSC2710 Typical Characteristics 500 1000 IB = 2.0mA VCE=1V IC[mA], COLLECTOR CURRENT 400 IB = 1.8mA hFE, DC CURRENT GAIN IB = 1.6mA 300 IB = 1.4mA IB = 1.2mA 100 200 IB = 1.0mA IB = 0.8mA IB = 0.6mA 10 100 IB = 0.4mA IB = 0.2mA 0 0 2 4 6 8 10 1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Cha...