KSC2335

KSC2335 KSC2335 High Speed, High Voltage Switching Industrial Use NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 1 TO-220 2.Collector 3.Emitter 1.Base Value 500 400 7 7 15 3.5 1.5 40 150 - 55 ~ 150 Units V V V A A A W W °C °C * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = 3A, IB1 = 0.6A, L = 1mH IC = 3A, IB1 = -IB2 = 0.6A VBE(off) = -5V, L = 180µH, Clamped IC = 6A,IB1= 2A, IB2 = -0.6A VBE(off) = -5V, L = 180µH, Clamped VCB = 400V, IE = 0 VCE = 400V, RBE= 51Ω @ TC=125°C VCE = 400V, VBE(off)= -1.5V VCE = 400V, VBE(off)= -1.5V @ TC=125°C VEB = 5V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCC =150V, IC= 3A IB1 = -IB2 = 0.6A RL= 50Ω 20 20 10 Min. 4...