KSC2333

KSC2333 KSC2333 High Speed Switching Application Low Collector Saturation Voltage Specified of Reverse Biased SOA With Inductive Load NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP *Collector Current (Pulse) IB Base Current (DC) PC Collector Dissipation (TC=25°C) TJ Junction Temperature TSTG Storage Temperature *PW≤350µs, Duty Cycle≤10% 1 TO-220 1.Base 2.Collector 3.Emitter Value 500 400 7 2 4 1 15 150 - 55 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) VCEX(sus)1 Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage VCEX(sus)2 Collector-Emitter Sustaining Voltage ICBO ICER ICEX1 ICEX2 Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current IEBO Emitter Cut-off Current hFE1 hFE2 * DC Current Gain VCE(sat) * Collector-Emitter Saturation Voltage VBE(sat) * Base-Emitter Saturation Voltage tON Turn ON Time tSTG Storage Time tF Fall Time * Pulse Test: PW≤350µs, Duty Cycle≤2%Pulsed Test Condition IC = 0.5A, IB =0.1A, L = 1mH IC = 0.5A, IB1 = -IB2 = 0.1A TC = 125°C, L = 180µH, clamped IC = 1A, IB1 = 0.2A, -IB2 =0.2A TC= 125°C, L = 180µH, clamped VCB = 400V, IE = 0 VCE = 400V, RBE =51Ω, TC = 125°C VCE = 400V, VBE(off) = -5V...